UF5408 DATASHEET PDF

There are two main switching noise issues to consdider with silicon diodes in rectifers: Firstly, a small voltage is need across the diode for the diode to conduct. This is typically 0. The consequence of this that there is a region around the zero crossing point of the input waveform where there is no conduction. This causes harmonics extending into RF to be induced on the power rails AND back into the transformer. These harmonics can be coupled to other windings, eg the filament supply.

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No liability will be accepted by the publisher for any consequence of its use. Typical DC current gain. Exposure to limiting values for extended periods may affect device reliability. HTTP This page has been moved Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. C I Region of permissible DC operation.

Silicon diffused power transistor buaf datasheet catalog. Typical collector-emitter saturation voltage. SOT; Datqsheet seating plane is electrically isolated from all terminals. Forward bias safe operating area.

July 5 Rev 1. Typical collector storage and fall time. C 1 Turn-off current. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. Refer to mounting instructions for F-pack envelopes. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

July 1 Rev 1. Stress above one or more of the limiting values dataxheet cause permanent damage to the device. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Application information Where application information is given, it is advisory and does not form part of the specification. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

July 2 Rev 1. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. This data sheet contains target or goal specifications for product development. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, datasyeet generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

II Extension for repetitive pulse operation. Typical base-emitter saturation voltage. July 7 Rev 1. Buaf datasheet, equivalent, cross reference search.

Buaf transistor equivalent substitute crossreference search. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. July 6 Rev 1. Budf transistor equivalent substitute crossreference search. Related Articles

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